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CS9N90FA9D Datasheet, Huajing Microelectronics

CS9N90FA9D mosfet equivalent, silicon n-channel power mosfet.

CS9N90FA9D Avg. rating / M : 1.0 rating-13

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CS9N90FA9D Datasheet

Features and benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 62nC) l Low Reverse transfer capacitances(Typical: 18pF) l 100% Single Pulse avalanche energy.

Application

Power switch circuit of PC POWER. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDM.

Description

CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 900 9 60 0.9 performance and enhance the avalanche energy. .

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CS9N90FA9D Page 1 CS9N90FA9D Page 2 CS9N90FA9D Page 3

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